III-Nitride/Ga2O3 heterostructure for future power electronics: opportunity and challenges

Nirajman Shrestha; Jun Hee Lee; F. H. Teherani; Manijeh Razeghi

doi:10.1117/12.3011688

8 March 2024 III-Nitride/Ga₂O₃ heterostructure for future power electronics: opportunity and challenges

Nirajman Shrestha, Jun Hee Lee, F. H. Teherani, Manijeh Razeghi

Proceedings Volume 12895, Quantum Sensing and Nano Electronics and Photonics XX; 128950B (2024) https://doi.org/10.1117/12.3011688
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Ga₂O₃ has become the new focal point of high-power semiconductor device research due to its superior capability to handle high voltages in smaller dimensions and with higher efficiencies compared to other commercialized semiconductors. However, the low thermal conductivity of the material is expected to limit device performance. To compensate for the low thermal conductivity of Ga₂O₃ and to achieve a very high density 2-dimensional electron gas (2DEG), an innovative idea is to combine Ga₂O₃ with III-Nitrides (which have higher thermal conductivity), such as AlN. However, metal-polar AlN/β-Ga₂O₃ heterojunction provide type-II heterojunction which are beneficial for optoelectronic application. because of the negative value of specific charge density. On the other hand, N-polar AlN/β-Ga₂O₃ heterostructures provide higher 2DEG concentration and larger breakdown voltage compared to conventional AlGaN/GaN devices. This advancement would allow the demonstration of RF power transistors with a 10x increase in power density compared to today’s State of the Art (SoA) and provide a solution to size, weight, and power-constrained applications.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Nirajman Shrestha, Jun Hee Lee, F. H. Teherani, and Manijeh Razeghi "III-Nitride/Ga₂O₃ heterostructure for future power electronics: opportunity and challenges", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950B (8 March 2024); https://doi.org/10.1117/12.3011688

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