High-speed MBE-grown 1550 nm wafer-fused VCSELs

Georgiy Sapunov; Si-Cong Tian; Sergey Blokhin; Iakov Kovach; Denis Papylev; Stanislav Rochas; Vladislav Andryushkin; Evgenii Kolodeznyi; Andrey Babichev; Andrey Gladyshev; Innokenty Novikov; Alexey Blokhin; Mikhail Bobrov; Nikolay Maleev; Kirill Voropaev; Victor Ustinov; Mansoor Ahamed; Konstantin Shugurov; Anton Egorov; Leonid Karachinsky; Dieter Bimberg

doi:10.1117/12.3000473

13 March 2024 High-speed MBE-grown 1550 nm wafer-fused VCSELs

Georgiy Sapunov, Si-Cong Tian, Sergey Blokhin, Iakov Kovach, Denis Papylev, Stanislav Rochas, Vladislav Andryushkin, Evgenii Kolodeznyi, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Kirill Voropaev, Victor Ustinov, Mansoor Ahamed, Konstantin Shugurov, Anton Egorov, Leonid Karachinsky, Dieter Bimberg

Author Affiliations +

Proceedings Volume 12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; 129040K (2024) https://doi.org/10.1117/12.3000473
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We study high-power high bit rate single-mode 1550 nm vertical-cavity surface-emitting lasers fabricated using wafer-fusion. The optical cavity was grown on an InP wafer, and the two AlGaAs/GaAs distributed Bragg reflectors were grown on GaAs wafers, all three by molecular-beam epitaxy. The active region is based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs tunnel junction. To confine current and optical radiation, we use a lateral-structured buried tunnel junction with ≈ 6 µm diameter and an etching depth of ≈ 20 nm. These VCSELs demonstrate up to 5 mW single-mode continuous-wave output power and a threshold current of ≈ 2 mA at 25 °C. Even at an ambient temperature of 85 °C, the maximum optical output power is larger than 1 mW. The lasers demonstrate a 34 Gbps non-return-to-zero data transfer rate and 42 Gbps (21 GBaud) using 4-level pulse amplitude modulation at 25 °C back-to-back conditions with ≈ 934 fJ/bit power consumption per bit, which is amongst the lowest values reported for this wavelength range and bit rate.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Georgiy Sapunov, Si-Cong Tian, Sergey Blokhin, Iakov Kovach, Denis Papylev, Stanislav Rochas, Vladislav Andryushkin, Evgenii Kolodeznyi, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Kirill Voropaev, Victor Ustinov, Mansoor Ahamed, Konstantin Shugurov, Anton Egorov, Leonid Karachinsky, and Dieter Bimberg "High-speed MBE-grown 1550 nm wafer-fused VCSELs", Proc. SPIE 12904, Vertical-Cavity Surface-Emitting Lasers XXVIII, 129040K (13 March 2024); https://doi.org/10.1117/12.3000473

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