Poster + Paper
13 March 2024 Integrating the tin-vacancy defect into diamond nanostructures
Author Affiliations +
Conference Poster
Abstract
Spin defects in diamond are attracting interest because of their possible application in quantum information processing. One group of such defects are group 4 defects (G4V). They posses an inversion symmetry, which makes them (in first order) invariant under electric fields, allowing them to be placed inside nanophotonic structures. One of those defects is the tin-vacancy (SnV) center. It has an atom like energy structure with the zero phonon line (ZPL) at 620 nm and a Debye-Waller factor of 0.6. The lower two branches are separated by 850 GHz [1], which means that phonon induced dephasing can be neglected at 2 K.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oliver von Berg, Vladislav Bushmakin, Rainer Stöhr, Andrej Denisenko, and Jörg Wrachtrup "Integrating the tin-vacancy defect into diamond nanostructures", Proc. SPIE 12911, Quantum Computing, Communication, and Simulation IV, 129111D (13 March 2024); https://doi.org/10.1117/12.3001556
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KEYWORDS
Waveguides

Diamond

Titanium

Fabrication

Quantum emitters

Etching

Nanostructures

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