Laser material interaction of undoped and doped silicon

Colin G. Meisner; Ross E. Turner; Gabriel Castillo; Javier E. Garay

doi:10.1117/12.3012613

11 April 2024 Laser material interaction of undoped and doped silicon

Colin G. Meisner, Ross E. Turner, Gabriel Castillo, Javier E. Garay

Proceedings Volume 12939, High-Power Laser Ablation VIII; 129390P (2024) https://doi.org/10.1117/12.3012613
Event: SPIE High-Power Laser Ablation, 2024, Santa Fe, New Mexico, United States

Abstract

This research looks to enhance our understanding of the laser-material interaction within silicon, considering variations in free carrier density. Silicon exhibits distinct optical behaviors, ranging from transparency to non-transparency, contingent on its doping concentration, particularly at a 1064 nm wavelength. Our experimental investigation delves into the quantitative assessment of damage size and the qualitative characterization of damage morphology induced by singlepulse 1064 nm laser irradiation. In this experiment, we vary laser intensities and focal depths to show their influence on the damage features of single crystal silicon with varying doping concentrations. The damage size and qualitative characteristics can be used to better understand the mechanisms responsible for the laser damage. Additionally, we can see when the damaged silicon is exhibiting pure melting or a form of ordered damage at higher intensities. The findings of this study give insight into the optimization of laser processing techniques that require precise control over material ablation, and phase change as cutting and material joining. Furthermore, the insights garnered from this work contribute to a broader understanding of the interplay between laser parameters and material properties. This study represents a move towards unlocking the potential of laser-matter interactions in shaping the future of silicon advanced manufacturing technologies.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Colin G. Meisner, Ross E. Turner, Gabriel Castillo, and Javier E. Garay "Laser material interaction of undoped and doped silicon", Proc. SPIE 12939, High-Power Laser Ablation VIII, 129390P (11 April 2024); https://doi.org/10.1117/12.3012613

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