Presentation + Paper
10 April 2024 Holistic assessment and control of total CDU
Author Affiliations +
Abstract
In a previous work, contributors to Critical Dimension (CD) variability intra-field were shown to come from reticle, contrast fading coming from reticle M3D fading and scanner optics fading. In addition, intra-field best focus shifts (BF) were reported. It called for a holistic assessment and control of total CD uniformity (CDU). In this work we expand the experimental validation total CDU in two ways (1) we study the local reticle variations and its translation to wafer variability by adding Aerial Image Measurement System (AIMS) into the metrology loop (2) we investigate if the observed best focus differences have impact on the 3D aspects of the resist: resist profile and local CDU at bottom and top of contact hole were measured by Atomic Force Microscopy (AFM).
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jo Finders, Vidya Vaenkatesan, Luc van Kessel, Ruben Maas, Tasja van Rhee, Varun Kakkar, Dominykas Gustas, Eelco van Setten, and Claire van Lare "Holistic assessment and control of total CDU ", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295303 (10 April 2024); https://doi.org/10.1117/12.3010890
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Reticles

3D mask effects

Atomic force microscopy

Extreme ultraviolet lithography

Scanners

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