Poster + Paper
9 April 2024 Sensitivity improvement of fluoroalkylated EUV resist with electron-rich vinyl units
Gayoung Kim, Yejin Ku, Jin-Kyun Lee, Jiho Kim, Byeong-Gyu Park, Sangsul Lee, Yu Ha Jang, Byung Jun Jung, Chawon Koh, Tsunehiro Nishi, Hyun-Woo Kim
Author Affiliations +
Conference Poster
Abstract
In this study, we present a method to enhance the sensitivity of fluorinated EUV resists by leveraging the rapid coupling reaction between electrophilic carbon radicals and electron-rich alkenes. To validate the impact of the vinyl groups, DVS-HNF was synthesized by introducing fluorinated alkyl chains and silyl vinyl functional groups into the model compound. Additionally, TMS-HNF and EDMS-HNF, which do not contain a vinyl moiety, were synthesized for comparison. To evaluate the patterning properties of the three materials, e-beam lithography experiments were conducted, resulting in the formation of negative-tone patterns for all three materials. Comparing sensitivities, DVS-HNF with two vinyl moieties exhibited the most excellent sensitivity, confirming the effective collaboration between fluorinated alkyl radicals and vinyl groups. After performing an EUV lithography experiment on DVS-HNF, it was confirmed that a 30 nm negative-tone pattern was successfully formed with excellent sensitivity. These results substantiate the potential of the single-component molecular resist for high performance EUV lithography.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Gayoung Kim, Yejin Ku, Jin-Kyun Lee, Jiho Kim, Byeong-Gyu Park, Sangsul Lee, Yu Ha Jang, Byung Jun Jung, Chawon Koh, Tsunehiro Nishi, and Hyun-Woo Kim "Sensitivity improvement of fluoroalkylated EUV resist with electron-rich vinyl units", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571X (9 April 2024); https://doi.org/10.1117/12.3010812
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KEYWORDS
Extreme ultraviolet lithography

Electron beam lithography

Extreme ultraviolet

Lithography

Film thickness

Thin films

Photons

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