Wafer-level identification of the beam width of MEMS gyroscopes

Meijia Xu; Jie Lin; Jiali Qi; Qin Shi; Anping Qiu

doi:10.1117/12.3014953

4 March 2024 Wafer-level identification of the beam width of MEMS gyroscopes

Meijia Xu, Jie Lin, Jiali Qi, Qin Shi, Anping Qiu

Proceedings Volume 12981, Ninth International Symposium on Sensors, Mechatronics, and Automation System (ISSMAS 2023); 129812G (2024) https://doi.org/10.1117/12.3014953
Event: 9th International Symposium on Sensors, Mechatronics, and Automation (ISSMAS 2023), 2023, Nanjing, China

Abstract

This paper proposed an in-situ electrical method that can identify the drive beam width and the sense beam width of the MEMS gyroscope at the wafer level. The mechanical frequencies of two special modes were selected to characterize the beam width. Ten chips distributed on a wafer was selected for experiments. The experimental results indicate that the etching error increasing from the wafer center to the edge, and the dispersion on a wafer with a radius of 75 mm is about 300 nm. Optical microscopy was used to prove the reliability of the method and the wafer-level data verified the distribution of the etching error. This work is aimed at providing a method for fabless designers to explore the fabrication imperfections during the MEMS wafer processing.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Meijia Xu, Jie Lin, Jiali Qi, Qin Shi, and Anping Qiu "Wafer-level identification of the beam width of MEMS gyroscopes", Proc. SPIE 12981, Ninth International Symposium on Sensors, Mechatronics, and Automation System (ISSMAS 2023), 129812G (4 March 2024); https://doi.org/10.1117/12.3014953

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