Study on performance degradation of static random access memory cells

Zifan Shen; Weixian Liu; Cunbao Ma

doi:10.1117/12.3014746

4 March 2024 Study on performance degradation of static random access memory cells

Zifan Shen, Weixian Liu, Cunbao Ma

Proceedings Volume 12981, Ninth International Symposium on Sensors, Mechatronics, and Automation System (ISSMAS 2023); 129813S (2024) https://doi.org/10.1117/12.3014746
Event: 9th International Symposium on Sensors, Mechatronics, and Automation (ISSMAS 2023), 2023, Nanjing, China

Abstract

Static random access memory (SRAM) is a high-speed memory, which will produce performance degradation with the increase of use time, and the current research mostly analyzes its degradation process from an experimental point of view, but the correlation between basic circuits and components is insufficient. Starting from the physical degradation effect of transistors in SRAM unit circuits, this paper simulates the circuit-level characteristics of SRAM unit circuits to simulate their performance degradation, forming a complete research system from principle to phenomenon, and finding a new path for studying the circuit-level health monitoring method of SRAM performance degradation.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Zifan Shen, Weixian Liu, and Cunbao Ma "Study on performance degradation of static random access memory cells", Proc. SPIE 12981, Ninth International Symposium on Sensors, Mechatronics, and Automation System (ISSMAS 2023), 129813S (4 March 2024); https://doi.org/10.1117/12.3014746

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