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Within this work we demonstrate on-chip magnetometry on a commercial 4H-silicon carbide power electronics device. For this purpose, we perform optically detected magnetic resonance measurements on silicon vacancies within the epi-layer. To this end, a dedicated home-made microscope was built. Spectra from wide range of magnetic field strength and angles were recorded and magnetic field parameters were robustly retrieved using a differential evolution algorithm. The approach presented here shows promise in robust retrieval of magnetic field parameters applied to on-chip power device magnetometry.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Claudius C. Mullen, Gerald Auböck, Jaka Pribosek, "Towards on-chip magnetometry for SiC power electronics using Si vacancies in 4H-SiC," Proc. SPIE 12993, Quantum Technologies 2024, 129930Q (10 June 2024); https://doi.org/10.1117/12.3029599