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An ultra-compact 1.31μm-emission photonic crystal (PC) nano-ridge laser directly grown on a silicon substrate without thick buffer layers achieves lasing with a cavity length as small as 50 μm at a remarkably low pumping threshold of 4.42 kW/cm2. This laser exhibits a lasing peak with side-mode suppression ratio of over 17 dB and a linewidth as narrow as 1.47 nm under 22.91 kW/cm2 pulsed pumping.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Z. Ouyang, D. Colucci, E. M. B. Fahmy, A. A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout, "Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate," Proc. SPIE 13012, Integrated Photonics Platforms III, 130120D (18 June 2024); https://doi.org/10.1117/12.3016154