Performance simulation of ultraviolet photodetector with graphene/gallium nitride Schottky junction

Ran Jia; Chengwei Zhao; Zhenhua Li; Xiaoxin Wang

doi:10.1117/12.3025801

8 April 2024 Performance simulation of ultraviolet photodetector with graphene/gallium nitride Schottky junction

Ran Jia, Chengwei Zhao, Zhenhua Li, Xiaoxin Wang

Proceedings Volume 13090, International Conference on Computer Application and Information Security (ICCAIS 2023); 130900D (2024) https://doi.org/10.1117/12.3025801
Event: International Conference on Computer Application and Information Security (ICCAIS 2023), 2023, Wuhan, China

Abstract

Ultraviolet (UV) photodetectors have significantly impacted people's lives in UV communication, flame monitoring, missile plume detection, and astronomical studies. Graphene (Gr)/gallium nitride (GaN) Schottky junctions (SJs) have a more promising prospect in UV photoelectric devices than metal/GaN SJs owing to their higher efficiency, wider photoactive area, and better thermal stability. However, previous studies have neglected the impact of GaN polarity on photoelectric characteristics. In this study, the photoelectric characteristics of a Gr/GaN SJ were simulated using Silvaco TCAD, and the effect of the GaN polarity on the detector performance was investigated. The photodetector with a Gr/GaN SJ achieved a responsivity of 0.26 A/W, response time of 0.1 ns, and external quantum efficiency of 89.8% at a reverse bias of -0.5 V. Additionally, the on/off ratio and detectivity of the photodetector with a Gr/Ga-polar GaN SJ were approximately 10⁶ and 10³ times those of the photodetector with a Gr/N-polar GaN SJ, respectively. These considerable disparities are attributable to the higher Schottky barrier and the substantial built-in electric field between Gr and Gapolar GaN. The results provide theoretical guidance for preparing GaN-based SJs and their application in photoelectric devices.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ran Jia, Chengwei Zhao, Zhenhua Li, and Xiaoxin Wang "Performance simulation of ultraviolet photodetector with graphene/gallium nitride Schottky junction", Proc. SPIE 13090, International Conference on Computer Application and Information Security (ICCAIS 2023), 130900D (8 April 2024); https://doi.org/10.1117/12.3025801

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KEYWORDS

Gallium nitride

Photodetectors

Ultraviolet radiation

Dark current

Electric fields

Polarization

Electrons

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