Realization of EBAPS imaging under 10-5lx illumination based on micro-nano preparation

Hesheng Tan; Yaobin Li; Yongfa Dong; Huaiyun Fan; Shiqi Yang; Changbao Deng; Xin Zhang; Linwei Song

doi:10.1117/12.3023672

18 March 2024 Realization of EBAPS imaging under 10^-5lx illumination based on micro-nano preparation

Hesheng Tan, Yaobin Li, Yongfa Dong, Huaiyun Fan, Shiqi Yang, Changbao Deng, Xin Zhang, Linwei Song

Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 131045E (2024) https://doi.org/10.1117/12.3023672
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China

Abstract

With its wide application background in biological detection, low-light night vision, lidar, high-energy physics and astronomical observation fields, weak signal detection imaging technology under low illumination has always been a hot spot in the world. Electron bombardment APS (EBAPS) hybrid photodetector is one of the most advanced hybrid devices, which has the advantages of fast response speed, high dynamic range and spatial resolution, digital output. And it can work in low-light environments and even achieve single-photon detection, which is the key development of the next generation of low-light imaging devices at home and abroad. In this study, an EBAPS camera that can image clearly under 10^-5lx illumination is reported. Through the research of APS chip backside grinding and chip surface passive film, the detection ability of the device is improved, and a key technical problem in the development of EBAPS is solved.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hesheng Tan, Yaobin Li, Yongfa Dong, Huaiyun Fan, Shiqi Yang, Changbao Deng, Xin Zhang, and Linwei Song "Realization of EBAPS imaging under 10^-5lx illumination based on micro-nano preparation", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 131045E (18 March 2024); https://doi.org/10.1117/12.3023672

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KEYWORDS

Light sources and illumination

Dark current

Passivation

Film thickness

Semiconductors

Atomic layer deposition

Dry etching

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