Paper
18 March 2024 Application of IBE etching process in EBAPS device
Author Affiliations +
Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 131045J (2024) https://doi.org/10.1117/12.3023680
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China
Abstract
Electron bombardment active pixel sensor (EBAPS) is a new type of night vision imaging digital device. It has outstanding characteristics such as all-weather, small size, light weight, and large dynamic range, which has attracted widespread attention in the fields of biological detection, high-energy physics, and low-light night vision imaging. In this paper, an EBAPS device for low-light imaging was prepared, the APS image sensor chip was etched and backside grinded by ion beam etching (IBE) equipment. Taguchi's experimental design was used to investigate the effects of IBE etching energy, beam current and angle on the surface roughness and etching depth of the passivation film layer on the surface of APS image sensor. The electron bombardment imaging under 5×10-5lx illumination is realized by applying the most effective process parameters to EBAPS devices.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Huaiyun Fan, Hesheng Tan, Yaobin Li, Yongfa Dong, Shiqi Yang, Xin Zhang, Huabing Deng, Zhou Fang, Dongwen Hu, Zhujun Chu, and Linwei Song "Application of IBE etching process in EBAPS device", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 131045J (18 March 2024); https://doi.org/10.1117/12.3023680
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KEYWORDS
Etching

Surface roughness

Passivation

Silicon

Back illuminated sensors

Light sources and illumination

Aluminum

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