Paper
3 June 2024 Optimization of PbS colloidal quantum dots-based near-infrared photodetectors using pentacene
Author Affiliations +
Proceedings Volume 13182, 2024 International Conference on Optoelectronic Information and Optical Engineering (OIOE 2024); 1318213 (2024) https://doi.org/10.1117/12.3030574
Event: 2024 International Conference on Optoelectronic Information and Optical Engineering (OIOE 2024), 2024, Kunming, China
Abstract
Lead sulfide colloidal quantum dots ( PbS CQDs) offer the unique advantages of tunable bandgap, cost-effectiveness, and ease of processing. These characteristics make PbS CQDs an ideal candidate for the development of near-infrared (NIR) photodetectors, with promising applications in diverse fields such as fiber optic communication, biomedical imaging, and national defense. In this study, NIR photodetectors employing indium gallium zinc oxide (IGZO) as the carrier conductive layer, PbS CQDs as the photosensitive layer, and pentacene as the functional enhancement layer are fabricated and systematically studied. Comparative analysis unveiled That the p-type semiconductor property of the pentacene is leveraged to increase the photoresposne of the PbS CQDs-IGZO NIR photodetectors. This work not only sheds light on the structural advancements of photosensitive field-effect transistors but also provides valuable insights into optimizing their performance.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Fangzhou Yi, Dingting Zheng, Zhannan Peng, and Zhenhua Sun "Optimization of PbS colloidal quantum dots-based near-infrared photodetectors using pentacene", Proc. SPIE 13182, 2024 International Conference on Optoelectronic Information and Optical Engineering (OIOE 2024), 1318213 (3 June 2024); https://doi.org/10.1117/12.3030574
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KEYWORDS
Lead

Photocurrent

Photodetectors

Thin films

Quantum devices

Quantum light

Thin film devices

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