Density of localized states in glow-discharge a-Si1-x Cx:H

Ozcan Oktu; Sandro Usala; Guy J. Adriaenssens; H. Tolunay; A. Eray

doi:10.1117/12.24296

1 March 1991 Density of localized states in glow-discharge a-Si1-x Cx:H

Ozcan Oktu, Sandro Usala, Guy J. Adriaenssens, H. Tolunay, A. Eray

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24296
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

For a-Si1 C :H samples prepared with /([CH4J + [SiH4J) ratios of 0. 1 0. 2 dxO. 25 the density of deep states has been investigated by means of post-transit-time photocurrent analysis and thermally stimulated conductivity. Both techniques yield results which are in good agreement and show a localized states density which rises towards midgap.

Citation Download Citation

Ozcan Oktu, Sandro Usala, Guy J. Adriaenssens, H. Tolunay, and A. Eray "Density of localized states in glow-discharge a-Si1-x Cx:H", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24296

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