External factors' influences on AIIIBV light-emitting structures

George S. Svechnikov; Igor V. Rizikov

doi:10.1117/12.24575

1 February 1991 External factors' influences on AIIIBV light-emitting structures

George S. Svechnikov, Igor V. Rizikov

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24575
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A comparative analysis of the effects of temperature, and electron (4.5 MeV), neutron (0.1 MeV), and gamma (1.25 MeV) irradiation on GaAs(1-x)P(x) (x

Citation Download Citation

George S. Svechnikov and Igor V. Rizikov "External factors' influences on AIIIBV light-emitting structures", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24575

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