Epitaxial regrowth of silicon on sapphire by rapid isothermal processing

R. Madarazo; A. G. Pedrine; Allison A. S. Sol; Vitor Baranauskas

doi:10.1117/12.25727

1 April 1991 Epitaxial regrowth of silicon on sapphire by rapid isothermal processing

R. Madarazo, A. G. Pedrine, Allison A. S. Sol, Vitor Baranauskas

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25727
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Silicon (100) films deposited by CVD and amorphized by ion implantation on (1102) sapphire wafers have been recrystallized by the use of Rapid-Isothermal-Processing at temperatures between 873 K to 1073 K for periods of 45to 540 S. The characterization of the regrowth was monitored by optical and infrared spectrometry. The crystallization was clearly observed in the above time range only for temperatures close to 1073 K. At this temperature for 2800 A films the measured crystallization rate was 10. 3 A/s. SIMS profile measurements showed that no diffusion of the impurities detected in the as-deposited film (such as 02 Al Mg Si30 C and Na) occurred in the film after the RIP regrowth. 1.

Citation Download Citation

R. Madarazo, A. G. Pedrine, Allison A. S. Sol, and Vitor Baranauskas "Epitaxial regrowth of silicon on sapphire by rapid isothermal processing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25727

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