Production considerations necessary to produce large quantities of optoelectronic devices by MOCVD epitaxy

Steven I. Boldish

doi:10.1117/12.44265

1 June 1991 Production considerations necessary to produce large quantities of optoelectronic devices by MOCVD epitaxy

Steven I. Boldish

Proceedings Volume 1449, Electron Image Tubes and Image Intensifiers II; (1991) https://doi.org/10.1117/12.44265
Event: Electronic Imaging '91, 1991, San Jose, CA, United States

Abstract

Production requirements for Metal Organic Chemical Vapor Deposition (MOCVD) of optoelectronic devices are demanding. The MOCVD facilities and reactor can be viewed as a system with several critical parts that must be designed properly for the system to function successfully. An MOCVD system is described. Issues are reviewed which pertain to good surface morphology. Exhaust system considerations are described since these may frequently be overlooked in bringing a system into service. Finally a practical noncontact method for determining the liquid level of the metal organic (MO) source material is introduced. All of these issues are important for the production of optoelectronic devices.

Citation Download Citation

Steven I. Boldish "Production considerations necessary to produce large quantities of optoelectronic devices by MOCVD epitaxy", Proc. SPIE 1449, Electron Image Tubes and Image Intensifiers II, (1 June 1991); https://doi.org/10.1117/12.44265

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