Frequency and temperature dependence of the mm-wave dielectric properties of silicon with high d.c. resistivity

R. Heidinger

doi:10.1117/12.2301481

1 December 1990 Frequency and temperature dependence of the mm-wave dielectric properties of silicon with high d.c. resistivity

R. Heidinger

Author Affiliations +

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15141Z (1990) https://doi.org/10.1117/12.2301481
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

The dielectric properties of silicon with d.c. resistivity of 1.6-1.7.10⁴Ωcm and 1.5-1.9.10³Ωcm have been determined at 300 K for the frequencies of 34 GHz and 145 GHz, and between 70 K and 200 K for 145 GHz. The dielectric loss levels at 300 K are directly related to the resistivity data, while at low temperatures, the dielectric properties indicate that more complex interaction processes are involved which in particular give rise to a maximum in dielectric loss around 150 K for the lower resistivity grade.

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R. Heidinger "Frequency and temperature dependence of the mm-wave dielectric properties of silicon with high d.c. resistivity", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15141Z (1 December 1990); https://doi.org/10.1117/12.2301481

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