Oxygen impurities in epitaxial silicon grown on Czochralski substrates: recent advances by micro-FTIR spectroscopy

M. Geddo; B. Pivac; Angiolino Stella

doi:10.1117/12.56474

1 March 1992 Oxygen impurities in epitaxial silicon grown on Czochralski substrates: recent advances by micro-FTIR spectroscopy

M. Geddo, B. Pivac, Angiolino Stella

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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56474
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany

Abstract

The interstitial oxygen profile across the epitaxial silicon and Czochralski silicon interface has been determined using a micro Fourier transform infrared technique. Systematic measurements performed in transversal wafer cross-section configuration demonstrate the presence of interstitial oxygen in the epitaxial layer, clearly indicating that solid state outdiffusion from the substrate occurs during film preparation. Moreover, it is shown that oxygen contamination may produce precipitation phenomena inside the film.

Citation Download Citation

M. Geddo, B. Pivac, and Angiolino Stella "Oxygen impurities in epitaxial silicon grown on Czochralski substrates: recent advances by micro-FTIR spectroscopy", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); https://doi.org/10.1117/12.56474

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