Monolithic balanced pin-JFET front-end for 1.3-1.5 un coherent transmission

Louis Giraudet

doi:10.1117/12.2321795

1 December 1992 Monolithic balanced pin-JFET front-end for 1.3-1.5 μn coherent transmission

Louis Giraudet

Proceedings Volume 1582, Integrated Optoelectronics for Communication and Processing; (1992) https://doi.org/10.1117/12.2321795
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

InGaAs based balanced pin-JEET front-ends have been fabricated, using a single step MBE growth and a diffused gate technology. High responsivity photodiodes were obtained by the use of an A1GaInAS window layer, and a good balance in pin characteristics was obtained. The JEET structure incorporates a two doping level channel. Input noise density of the front-ends was measured to be below 15 pAiÖHz up to 1 GHz, togetherwith a common mode noise rejection below -35dB.

Citation Download Citation

Louis Giraudet "Monolithic balanced pin-JFET front-end for 1.3-1.5 μn coherent transmission", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321795

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