Paper
1 December 1992 New developments in mass-transport fabrication for reliable high-performance integrated optoelectronic devices
Z. L. Liau
Author Affiliations +
Abstract
Current investigations of material issues in mass-transport fabrication are reviewed. Evaporation loss and resulting surface roughness have been identified and simple techniques developed for effective prevention. Photoluminescence intensity degradation and improvement were observed under different experimental conditions. Evidence of defect generation associated with high transport rate has also been observed. Extension of mass transport to GaAs-based heterostructure lasers showed considerable promise for advanced integrated siructures with high performance and improved reliability.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. L. Liau "New developments in mass-transport fabrication for reliable high-performance integrated optoelectronic devices", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321801
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KEYWORDS
Semiconducting wafers

Microlens

Phosphorus

Reliability

Heterojunctions

Indium

Luminescence

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