Paper
16 December 1992 Electric field effect in GaInAs/InP quantum wire and quantum box structures and application to intersectional optical switch
K. G. Ravikumar, Takuya Aizawa, Masahiro Asada, Yasuharu Suematsu
Author Affiliations +
Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.635244
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Large electric field induced refractive index variation and large index variation absorption loss variation ratio in low fundamental absorption region are theoretically reported in a GaInAs/InP quantum box (QB) structure. This effect is shown to be applicable to low loss intersectional type optical switch. Moreover the Q B size dependence as well as fluctuations in QB size on QB-intersectional type optical switch was also discussed. As a first step towards the realization of such high-dimensional structure we have fabricated and measured the index variation in a GaInAs/InP multi-layered ( 3layers) quantum wire structure. The measured index variation was around 4 at an applied reverse bias voltage of 3V. I.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. G. Ravikumar, Takuya Aizawa, Masahiro Asada, and Yasuharu Suematsu "Electric field effect in GaInAs/InP quantum wire and quantum box structures and application to intersectional optical switch", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.635244
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KEYWORDS
Absorption

Optical switching

Quantum wells

Refractive index

Switching

Modulators

Semiconductors

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