Device-degradation phenomena in III-V semiconductor lasers and LEDs

Osamu Ueda

doi:10.1117/12.59140

26 June 1992 Device-degradation phenomena in III-V semiconductor lasers and LEDs

Osamu Ueda

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59140
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The current status and understanding of various degradation phenomena in III-V optoelectronic devices are discussed, with special consideration given to semiconductor lasers and light emitting diodes fabricated from GaAlAs/GaAs, InGaAsP/InP, and InGaAsP/InGaP/GaAd double-heterostructure materials. Three major degradation phenomena are discussed: rapid degradation, gradual degradation, and catastrophic failure. For each type of these degradation phenomena, methods for eliminating degradation are proposed.

Citation Download Citation

Osamu Ueda "Device-degradation phenomena in III-V semiconductor lasers and LEDs", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59140

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