Analytical depletion-mode MOSFET model for analysis of CCD output characteristics

James S. Flores

doi:10.1117/12.135947

12 August 1992 Analytical depletion-mode MOSFET model for analysis of CCD output characteristics

James S. Flores

Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992) https://doi.org/10.1117/12.135947
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

An analytical depletion-mode MOSFET (DMFET) and gate-to-channel capacitance (Cgc) models were derived from the potential and charge distribution model created by Van der Tol and Chamberlain [1]. The DMFET model predicts ''ds from the four terminal voltages structural parameters and material properties. Three parameters - Nd /tn and x - were extracted from Ids versus Vds curves by deriving conductivity and transconductance expressions from the DMFET model and knowing Na W/L and x07. The DMFET model was then utilized in a source follower configuration to establish the quiescent operating point. The FET''s quiescent point determines its gain and Cgc. Sensitivity is the product of (OVs/9Vg) . (Vg/OQn) i. e. gain and floating node capacitance. This composite model was then used to predict the effects of Rs VOD and VDD on sensitivity and linearity. Comparisons are made to SAGE CCD measurements. 1.

Citation Download Citation

James S. Flores "Analytical depletion-mode MOSFET model for analysis of CCD output characteristics", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); https://doi.org/10.1117/12.135947

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