Paper
1 June 1992 Single-level electric testsites for phase-shifting masks
Author Affiliations +
Abstract
The phase shifting mask technology has quickly progressed from the exploratory phase to a serious development phase. This requires high resolution measurement techniques to quantify experimental results to optimize the designs. This paper describes a set of electrical linewidth measurement testsites which covers all five representative lithographic features in combination of dark-field and light-field patterns, positive and negative resists. The testsites can investigate binary intensity mask, attenuated, alternating, subresolution-assisted, rim, unattenuated, edge, and covered edge phase shifting masks. All testsites can be used with a single-level wafer exposure. There is no need to remove extra shorts or opens induced by uncovered phase shifters.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Burn Jeng Lin, Donald J. Samuels, and Chris A. Spence "Single-level electric testsites for phase-shifting masks", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59795
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Phase shifts

Opacity

Inspection

Phase shifting

Integrated circuits

Metrology

RELATED CONTENT

Increasing the dimensions of metrology
Proceedings of SPIE (June 01 1990)
Impact of reticle defects on submicron 5x lithography
Proceedings of SPIE (June 01 1990)
Automated lithocell
Proceedings of SPIE (June 01 1990)

Back to Top