Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers

Sean S. O'Keefe; Luke F. Lester; D. Teng; William J. Schaff; Lester Fuess Eastman

doi:10.1117/12.138396

2 December 1992 Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers

Sean S. O'Keefe, Luke F. Lester, D. Teng, William J. Schaff, Lester Fuess Eastman

Author Affiliations +

Proceedings Volume 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III; (1992) https://doi.org/10.1117/12.138396
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

By introducing strain into semiconductor lasers using GaAs/Ga_(1-x)In_(x)As quantum wells, their modulation bandwidth has been increased to beyond 20 GHz. Our approach to high modulation bandwidth strained layer quantum well lasers has been to fabricate short cavity (less than l00-micron) multiple quantum well (MQW) structures. In order to fabricate lasers of this length, the facets must be etched by chemically assisted ion beam etching (CAIBE) rather than cleaving. In such short cavity MQW lasers fabricated by CAIBE using two different layer structures, a 3-dB modulation bandwidth of 28 GHz is obtainable under CW conditions. The current study investigates (1) the growth of different quantum well and barrier materials and their effects on device performance, (2) the dependence of differential gain and damping on quantum well width, depth, and number, and (3) the relationship between threshold current and high speed performance. Design criteria for optimizing high-speed performance are presented.

Citation Download Citation

Sean S. O'Keefe, Luke F. Lester, D. Teng, William J. Schaff, and Lester Fuess Eastman "Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); https://doi.org/10.1117/12.138396

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available