n-Si/SnO2 interface prepared by spray pyrolysis for photovoltaic applications

Hubert Cachet; Azeddine Messad; Michel Froment; Janine Bruneaux

doi:10.1117/12.130563

9 December 1992 n-Si/SnO₂ interface prepared by spray pyrolysis for photovoltaic applications

Hubert Cachet, Azeddine Messad, Michel Froment, Janine Bruneaux

Proceedings Volume 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry; (1992) https://doi.org/10.1117/12.130563
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

Spray pyrolysis was used to fabricate n-Si(1OO)/SiO₂/SnO₂ heterojunctions in view of photoconversion of solar energy. The effects of the temperature T_f at which the Sn0₂ film is formed (400-500°C) are particularly addressed. Direct imaging of the interfacial Si0₂ layer by HRTEM is presented, showing the relatively abrupt character of the interfaces. It is shown that (i) the open-circuit photopotential V_oc strongly decreases when T_f is incresased (ii) at a given T_f, V_oc presents a maximum as a function of the interfacial Si0₂ thickness. These results are discussed in terms of charge accumulation and current limitation at the Si/Si0₂ boundary.

Citation Download Citation

Hubert Cachet, Azeddine Messad, Michel Froment, and Janine Bruneaux "n-Si/SnO₂ interface prepared by spray pyrolysis for photovoltaic applications", Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); https://doi.org/10.1117/12.130563

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