Prospects for short-wavelength laser amplification in Si vapors

S. Kotochigova

doi:10.1117/12.144604

4 May 1993 Prospects for short-wavelength laser amplification in Si vapors

S. Kotochigova

Proceedings Volume 1810, 9th International Symposium on Gas Flow and Chemical Lasers; (1993) https://doi.org/10.1117/12.144604
Event: Ninth International Symposium on Gas Flow and Chemical Lasers, 1992, Heraklion, Greece

Abstract

A simple theoretical model has been proposed to describe the population inversion of the narrow autoionizing levels in Si atoms. The collision process between two initially excited atoms has been employed to populate the high energy levels. The generalized method of the atomic orbitals is applied here to calculate the interatomic potential curves for the Si₂ quasi-molecule and evaluate the probability of the energy transfer process. The laser amplification can occur with wavelengths within the ranges 214 - 310 nm and 111 - 122 nm.

Citation Download Citation

S. Kotochigova "Prospects for short-wavelength laser amplification in Si vapors", Proc. SPIE 1810, 9th International Symposium on Gas Flow and Chemical Lasers, (4 May 1993); https://doi.org/10.1117/12.144604

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available