Growth mode at the initial stage of InxGa1-xAs (0.28<x<1) on (100) GaAs by molecular-beam epitaxy

Shou-Zen Chang; T'ien-Chih Chang; Si-Chen Lee

doi:10.1117/12.131228

23 October 1992 Growth mode at the initial stage of InxGa1-xAs (0.28

Shou-Zen Chang, T'ien-Chih Chang, Si-Chen Lee

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131228
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

We described the successful development of planar, low dark current, and high sensitivity In0.4Ga0.6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and antireflection coatings, the detector has a quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 micrometers wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2 X 10-4 cm2 is 5 X 10-9 A at -5 V, and the breakdown voltage exceeds 25 V. To further study the quality of the p-i- n photodiode prepared on the lattice mismatched In0.4Ga0.6As/GaAs material system, the generation lifetime profile in the i-region of the photodiode has been determined by using a differential current-voltage (I-V) and capacitance-voltage (C-V) technique. In addition, the generation lifetime and deep-level defects in these p-i-n photodiodes were also determined by the deep-level transient spectroscopy (DLTS) measurement.

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Shou-Zen Chang, T'ien-Chih Chang, and Si-Chen Lee "Growth mode at the initial stage of InxGa1-xAs (0.28https://doi.org/10.1117/12.131228

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