Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction

Jin-Shown Shie; Jonathan S. Li; Fei-Chang Hwang; Heidi T. Wang

doi:10.1117/12.131288

26 October 1992 Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction

Jin-Shown Shie, Jonathan S. Li, Fei-Chang Hwang, Heidi T. Wang

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131288
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Narrowband self-filtering GaAs photodiode has been fabricated by LPE growth. N-type epitaxial layers of hi-lo-hi structure were grown on P-type substrate. By properly controlling the thickness and the doping concentration of the epilayers efficient blue suppression of the detector response is achievable, with a bandwidth as narrow as 315 angstroms centered at 880 nm. The device, therefore, is very useful in many applications which require background suppression and spectral matching to the correspondent LED light source.

Citation Download Citation

Jin-Shown Shie, Jonathan S. Li, Fei-Chang Hwang, and Heidi T. Wang "Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131288

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