X-ray mask metrology: the development of linewidth standards for x-ray lithography

Michael T. Postek Jr.; Jeremiah R. Lowney; Andras E. Vladar; William J. Keery; Egon Marx; Robert D. Larrabee

doi:10.1117/12.146525

24 June 1993 X-ray mask metrology: the development of linewidth standards for x-ray lithography

Michael T. Postek Jr., Jeremiah R. Lowney, Andras E. Vladar, William J. Keery, Egon Marx, Robert D. Larrabee

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146525
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The calibration of masks used in x-ray lithography has been successfully accomplished in the scanning electron microscopy (SEM) by utilizing the transmitted scanning electron detection technique. This has been made possible because these masks present a measurement subject different from most (if not all) other objects used in semiconductor processing because the support membrane is, by design, x-ray transparent. This characteristic can be used as an advantage in electron beam-based mask metrology since, depending upon the incident electron beam energies, substrate composition and substrate thickness, the membrane can also be essentially electron transparent.

Citation Download Citation

Michael T. Postek Jr., Jeremiah R. Lowney, Andras E. Vladar, William J. Keery, Egon Marx, and Robert D. Larrabee "X-ray mask metrology: the development of linewidth standards for x-ray lithography", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146525

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