Alpha-hydroxymethlbenzoin sulfonic acid esters--a versatile class of photoacid generating compounds for chemically amplified deep-UV photoresists

Horst Roeschert; Charlotte Eckes; Georg Pawlowski

doi:10.1117/12.154769

15 September 1993 Alpha-hydroxymethlbenzoin sulfonic acid esters--a versatile class of photoacid generating compounds for chemically amplified deep-UV photoresists

Horst Roeschert, Charlotte Eckes, Georg Pawlowski

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154769
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

This paper describes some physico-chemical properties and early lithographic results of deep- UV resist systems containing (alpha) -hydroxymethylbenzoin sulfonic acid esters as photoacid generating compounds. (alpha) -Hydroxymethylbenzoin sulfonic acid esters have been prepared in a three-step synthesis in good yields. The favorable thermal and optical properties of selected compounds are discussed in more detail. Uniform optical parameters at 248 nm and nearly identical photoacid generating efficiencies guarantee the formation of different sulfonic acids in comparable concentrations. Therefore (alpha) -hydroxymethylbenzoin sulfonic acid esters can serve as model compounds for systematic studies, i.e., determination of the inhibitor cleavage efficiency or diffusion characteristics of their acids. The influence of acid size and acid strength on the photosensitivity of resist formulations is discussed. The lithographic performance of an acetal-based deep-UV photoresist in terms of resolution, depth of focus, and exposure latitude demonstrates the suitability of (alpha) -hydroxymethylbenzoin sulfonic acid esters as an attractive class of photoacid generating compounds in chemically amplified UV 2-photoresists.

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Horst Roeschert, Charlotte Eckes, and Georg Pawlowski "Alpha-hydroxymethlbenzoin sulfonic acid esters--a versatile class of photoacid generating compounds for chemically amplified deep-UV photoresists", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154769

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