TAR processing for CD control in I-line and 248-nm lithography

Christopher F. Lyons; Nicholas K. Eib; Marina V. Plat; Gary T. Spinillo; Kevin M. Welsh

doi:10.1117/12.150471

8 August 1993 TAR processing for CD control in I-line and 248-nm lithography

Christopher F. Lyons, Nicholas K. Eib, Marina V. Plat, Gary T. Spinillo, Kevin M. Welsh

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150471
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The combination of dyed photoresist and top antireflection (TAR) coatings was applied to I- line and deep-UV lithography on polysilicon. Optimization of the resist layer's absorption and application of the TAR process significantly improves CD control of submicron gate level lithography.

Citation Download Citation

Christopher F. Lyons, Nicholas K. Eib, Marina V. Plat, Gary T. Spinillo, and Kevin M. Welsh "TAR processing for CD control in I-line and 248-nm lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150471

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