Analysis of growth parameters and strain in GaInSb/InAs superlattices

James M. Van Hove; Andrew M. Wowchak; G. L. Carpenter; Peter P. Chow; L. A. Chow

doi:10.1117/12.175789

11 May 1994 Analysis of growth parameters and strain in GaInSb/InAs superlattices

James M. Van Hove, Andrew M. Wowchak, G. L. Carpenter, Peter P. Chow, L. A. Chow

Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175789
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

InAs/InGaSb strained-layer superlattices have been deposited for long wavelength infrared (IR) detectors. The superlattice structure consists of alternating periods of InAs and InGaSb deposited upon GaSb or GaAs substrates. The lattice mismatch between the two layers is accommodated by strain which modifies the electronic and optical properties of the material. These properties can be controlled by varying the layer thickness, composition, and heterointerface properties. Molecular beam epitaxy was used to deposit the InAs/InGaSb superlattice and reflection high energy electron diffraction (RHEED) patterns were observed during growth. It was found that RHEED oscillations and x-ray diffraction patterns were heavily influenced by the incident As₂ flux used during the InAs layers. Precise control of the As flux with a valve cracker resulted in RHEED intensity oscillations continuing throughout the superlattice and excellent x-ray diffraction patterns. Fast Fourier transform IR spectroscopy of the superlattices indicate absorption around 13 micrometers .

Citation Download Citation

James M. Van Hove, Andrew M. Wowchak, G. L. Carpenter, Peter P. Chow, and L. A. Chow "Analysis of growth parameters and strain in GaInSb/InAs superlattices", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); https://doi.org/10.1117/12.175789

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