Strained-layer InAsP/InGaP MQWs grown by MOVPE

Paul K. L. Yu; M. Markarian; Robert B. Welstand; X. S. Jiang; Arthur R. Clawson; S. S. Lau

doi:10.1117/12.175287

2 May 1994 Strained-layer InAsP/InGaP MQWs grown by MOVPE

Paul K. L. Yu, M. Markarian, Robert B. Welstand, X. S. Jiang, Arthur R. Clawson, S. S. Lau

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175287
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Strained balanced InAsP/InGaP superlattices for optoelectronic applications were studied with materials grown by low pressure MOVPE. For 20 and 30 period InAsP/InGaP superlattices with a 23 percent As mole fraction in the InAsP layers, sharp x-ray satellite peaks are obtained. The superlattices show an average lattice constant close to that of the InP substrate. Strong photoluminescence with narrow emission linewidth are observed at room temperature around 1.11 micrometers . PIN diodes with an intrinsic region consisting of the InAsP/InGaP superlattice show efficient electroabsorption at wavelengths around 1.15 micrometers with a small residual absorption of 59 cm^-1.

Citation Download Citation

Paul K. L. Yu, M. Markarian, Robert B. Welstand, X. S. Jiang, Arthur R. Clawson, and S. S. Lau "Strained-layer InAsP/InGaP MQWs grown by MOVPE", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175287

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