Paper
10 June 1994 High-speed optical detectors for monolithic millimeter wave integrated circuits
Jinwook Burm, Kerry I. Litvin, David W. Woodard, William J. Schaff, Lester Fuess Eastman
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Abstract
Metal-semiconductor-metal photo-diodes with interdigitated Schottky barrier fingers have been developed for applications in monolithic optical receiver circuits with the purpose of detecting millimeter wave modulation signals being transmitted via an optical carrier. The devices are planar and incorporated submicron finger spacings and a thin absorption region for speed with a buried stack of tuned Bragg reflectors for enhanced sensitivity at the carrier wavelength. These devices have been integrated with short-gate MODFET amplifiers to form the complete monolithic integrated optical receiver circuit. The circuits comprise of the active devices and coplanar waveguide matching/filter networks for optimal MMW performance. DC bias networks have also been integrated with the circuits.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinwook Burm, Kerry I. Litvin, David W. Woodard, William J. Schaff, and Lester Fuess Eastman "High-speed optical detectors for monolithic millimeter wave integrated circuits", Proc. SPIE 2155, Optoelectronic Signal Processing for Phased-Array Antennas IV, (10 June 1994); https://doi.org/10.1117/12.177428
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Extremely high frequency

Integrated circuits

Integrated optics

Sensors

Integrated circuit design

Optical circuits

Receivers

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