Paper
3 November 1994 Synchrotron radiation (SR) irradiation stability of x-ray mask
Yoshio Yamashita, Hiroshi Okuyama, Kinya Ashikaga, Tomiyuki Arakawa
Author Affiliations +
Abstract
In this paper we report on the evaluation of the stability of mask materials against SR (synchrotron radiation) irradiation using a SORTEC SR ring. The radiation damage to SiN and SiC mask membranes, a W-based absorber and an SiO2 antireflective coating (ARC) film was examined. In order to evaluate the irradiation damage precisely, irradiation was performed over the entire area of the membrane window or the absorber film under conditions similar to those of the pattern exposure, instead of conventional acceleration damage tests irradiating a small portion of the sample. The large stored current and long beam life (25 H at 500 mA) of the SR ring enabled these irradiation tests. SiN and SiC mask membranes and the stress-free absorber have sufficiently high radiation stability for application to practical uses. In addition, a SiO2 film coated on a SiN mask membrane acts not only as an ARC film but also as a film of reducing pattern displacement induced by the radiation damage of the membrane.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshio Yamashita, Hiroshi Okuyama, Kinya Ashikaga, and Tomiyuki Arakawa "Synchrotron radiation (SR) irradiation stability of x-ray mask", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191919
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KEYWORDS
Silicon carbide

Photomasks

X-rays

Absorption

X-ray technology

Transmittance

Low pressure chemical vapor deposition

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