Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg1-xCdxTe

Charles Thomas Elliott; Neil T. Gordon; R. S. Hall; T. J. Phillips; C. L. Jones; B. E. Matthews; C. D. Maxey; N. E. Metcalfe

doi:10.1117/12.188684

17 October 1994 Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg_1-xCd_xTe

Charles Thomas Elliott, Neil T. Gordon, R. S. Hall, T. J. Phillips, C. L. Jones, B. E. Matthews, C. D. Maxey, N. E. Metcalfe

Author Affiliations +

Proceedings Volume 2269, Infrared Technology XX; (1994) https://doi.org/10.1117/12.188684
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Recent advances in the growth of cadmium mercury telluride (Hg_1-xCd_xTe or MCT) by metal organic vapor phase epitaxy (MOVPE) allow the fabrication of advanced device structures where both the alloy composition x and the doping concentration can be accurately controlled throughout the epitaxial layer. For p-type doping using arsenic, the acceptor concentration can be varied from 5 X 10¹⁵ cm^-3 to 4 X 10¹⁷ cm^-3 and for n-type doping using iodine, the donor concentration can be varied from 1 X 10¹⁵ cm^-3 to 2 X 10¹⁷ cm^-3. A number of diode arrays have been fabricated in this material and their properties assessed at 77 K, 195 K and 295 K. It has been found that the diffusion currents are at least ten times lower than in homojunctions. In addition, the devices exhibit negative resistance at temperatures above 190 K due to auger suppression. The successful demonstration of auger suppression in these structures has greatly improved the diode leakage currents at room temperature and will enable the development of new devices such as a room temperature laser detector.

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Charles Thomas Elliott, Neil T. Gordon, R. S. Hall, T. J. Phillips, C. L. Jones, B. E. Matthews, C. D. Maxey, and N. E. Metcalfe "Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg_1-xCd_xTe", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); https://doi.org/10.1117/12.188684

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