Paper
17 October 1994 Photoelectric cross talk between the elements of an extrinsic photoconductor detector array at low backgrounds
Boris I. Fouks, Vasily F. Kocherov, Igor I. Taubkin, Leonid A. Vinokurov, Nicolas B. Zaletaev
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Abstract
Operation of the low-background IR extrinsic photoconductor detectors and detector arrays depends essentially on the process of spreading of the time-dependent photocurrent. The spreading occurs due to the low non-steady-state screening of electric charges in the detectors. It induces the next non-steady-state affects: the increase in the photoresponse time, the essential difference between the photocurrents in the circuits of the source contact injecting free carriers into the detector and of the contact which serves as a drain for the carriers, and the high cross talk in the detector array. The results of the experimental study of these effects and some other ones in 36- and 48-element linear arrays (Si:Ga) and their theoretical description are presented. The theory is in a satisfactory agreement with the experimental data. Some consequences of these results, which are important for the space-based-astronomy applications of extrinsic detectors, are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris I. Fouks, Vasily F. Kocherov, Igor I. Taubkin, Leonid A. Vinokurov, and Nicolas B. Zaletaev "Photoelectric cross talk between the elements of an extrinsic photoconductor detector array at low backgrounds", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); https://doi.org/10.1117/12.188671
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KEYWORDS
Sensors

Detector arrays

Infrared sensors

Semiconductors

Switches

Photoresistors

Electric field sensors

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