Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty; Azzouz Sellai; Paul Dawson

doi:10.1117/12.189249

7 October 1994 Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Patrick G. McCafferty, Azzouz Sellai, Paul Dawson

Proceedings Volume 2274, Infrared Detectors: State of the Art II; (1994) https://doi.org/10.1117/12.189249
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

Citation Download Citation

Patrick G. McCafferty, Azzouz Sellai, and Paul Dawson "Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); https://doi.org/10.1117/12.189249

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