Novel material for visible-blind UV detectors

Mira Misra; Chris Zhou; Paul R. Bennett; Michael R. Squillante; Frank I. Ahmed

doi:10.1117/12.186630

14 September 1994 Novel material for visible-blind UV detectors

Mira Misra, Chris Zhou, Paul R. Bennett, Michael R. Squillante, Frank I. Ahmed

Proceedings Volume 2282, Ultraviolet Technology V; (1994) https://doi.org/10.1117/12.186630
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Boron nitride phosphide (BN_xP_1-x) films were grown on single crystal GaAs, using chemical vapor deposition. The films were smooth, well adhered to the substrate and exhibited resistivities on the order of 10¹¹ ohm-cm. Photoconductive detectors fabricated from these films showed quantum efficiencies of 33% and 40% at 254 nm and 365 nm respectively, with a drop of an order of magnitude at wavelengths greater than 400 nm. These measurements demonstrate the potential of BN_xP_1-x as a material for visible- blind UV detectors.

Citation Download Citation

Mira Misra, Chris Zhou, Paul R. Bennett, Michael R. Squillante, and Frank I. Ahmed "Novel material for visible-blind UV detectors", Proc. SPIE 2282, Ultraviolet Technology V, (14 September 1994); https://doi.org/10.1117/12.186630

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