Paper
21 December 1994 Preferential donor-acceptor pairing in heavily N-doped ZnSe?
Gertrude F. Neumark, Leon Radomsky, Igor L. Kuskovskiy
Author Affiliations +
Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197256
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
It has been shown in the literature that heavy N-doping of ZnSe leads to the introduction of deep donors, which are evidenced by new luminescence bands, deeper than the 'standard' donor-acceptor pair band. We suggest, based on reported shifts of the peaks, with excitation intensity, of the new bands, as well as on differences in their position among different samples, that these bands may involve 'strong' preferential pairing between the deep donors and the N acceptors. This type of pairing would indicate a high ion mobility of the deep donors. We have calculated the peak shifts, as a function of excitation intensity, for various reasonable parameter values. Based on these results, we conclude that strong preferential pairing cannot, at this time, be proven, but is nevertheless strongly indicated. We suggest that a proof should be possible by studying the intensity dependence over a wider range.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gertrude F. Neumark, Leon Radomsky, and Igor L. Kuskovskiy "Preferential donor-acceptor pairing in heavily N-doped ZnSe?", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197256
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Cited by 6 scholarly publications.
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KEYWORDS
Ions

Semiconductor lasers

Luminescence

Doping

Chemical engineering

Dielectrics

Materials science

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