Magnification correction for proximity x-ray lithography

Alek C. Chen; J. P. Silverman

doi:10.1117/12.209154

19 May 1995 Magnification correction for proximity x-ray lithography

Alek C. Chen, J. P. Silverman

Author Affiliations +

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209154
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A magnification mismatch between exposures levels represents a significant source of potential overlay errors in proximity x-ray lithography. We describe an approach using mechanical forces applied to the x-ray mask to adjust the relative magnification of the mask and wafer. Experiments have been performed which demonstrate the potential for magnification adjustment of more than 10 ppm. In addition, finite element modeling been used to understand the experimental results and develop an optimized arrangement of forces so as to provide magnification adjustment while adding virtually no distortion.

Citation Download Citation

Alek C. Chen and J. P. Silverman "Magnification correction for proximity x-ray lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209154

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