New technique for repairing opaque defects

Kazuo Aita; Yoshihiro Koyama; Hiroshi Matsumura; Takashi Kaito; Yasushi Satoh; Katsuhide Tsuchiya; Shigeru Noguchi

doi:10.1117/12.212806

3 July 1995 New technique for repairing opaque defects

Kazuo Aita, Yoshihiro Koyama, Hiroshi Matsumura, Takashi Kaito, Yasushi Satoh, Katsuhide Tsuchiya, Shigeru Noguchi

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212806
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

In order to repair opaque defects using a focused ion beam instrument that utilizes a Ga ion source, the excess film must be removed by sputter etching. Unfortunately, this method of repairing opaque defects does have several drawbacks. The first and foremost problem is the occurrence of the so called 'river bed', which greatly limits the effectiveness of the FIB mask repair instrument. We have found, however, that by using a new gas assisted etching procedure, the size of river beds can be reduced substantially, while simultaneously producing several other favorable effects. By introducing a new gas, the etching rate for chromium is enhanced 1.26 times, and the etching rate for quartz substrate is reduced 0.28 times. Therefore, the damage to the quartz substrate is reduced by 0.22 times over that found when no gas is used. In addition, the favorable effects make it possible to terminate etching on the quartz substrate, producing a noticeably flat chrome removed surface with little Ga staining. We evaluated the repaired masks using an inspection system, and then examined their printability using an I-line stepper. We obtained highly favorable results on both accounts.

Citation Download Citation

Kazuo Aita, Yoshihiro Koyama, Hiroshi Matsumura, Takashi Kaito, Yasushi Satoh, Katsuhide Tsuchiya, and Shigeru Noguchi "New technique for repairing opaque defects", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212806

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