Study of persistence in gadolinium oxysulfide x-ray phosphors

John A. Shepherd; Sol M. Gruner; Mark W. Tate; Melvin Tecotzky

doi:10.1117/12.211910

15 June 1995 Study of persistence in gadolinium oxysulfide x-ray phosphors

John A. Shepherd, Sol M. Gruner, Mark W. Tate, Melvin Tecotzky

Proceedings Volume 2519, X-Ray and Ultraviolet Sensors and Applications; (1995) https://doi.org/10.1117/12.211910
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

There is a need in the x-ray imaging community for phosphors with short persistence (I/I₀ < 0.1-0.01% in less than 0.5 ms). Persistence limits a detector's performance by defining the minimum x-ray exposure discernable for a given time after a previous exposure, by ghosting of previous images, and by limiting the dynamic range. The description of the luminescence decay time for any particular phosphor is tedious since the decay time is usually a complicated function of the excitation intensity, the exposure time, the phosphor temperature, and the impurity concentration, as well as the manufacturing procedure. We have characterized commercially available and specially synthesized gadolinium oxysulfide (Gd₂O₂S) phosphors with a variety of activators in terms of persistence, and relative light output, and discussed their possible usefulness for particular x-ray imaging experiments. We have found that the level of long-term persistence for Gd₂O₂S x-ray phosphors can differ by more than an order of magnitude solely due to changes in the exposure time. The persistence of these phosphors is characterized as a function of x-ray intensity, exposure time, and, when possible, imppurity concentrations.

Citation Download Citation

John A. Shepherd, Sol M. Gruner, Mark W. Tate, and Melvin Tecotzky "Study of persistence in gadolinium oxysulfide x-ray phosphors", Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); https://doi.org/10.1117/12.211910

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