Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser

Xiao-Wu Ni; Jian Lu

doi:10.1117/12.218643

8 September 1995 Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser

Xiao-Wu Ni, Jian Lu

Proceedings Volume 2551, Photoelectronic Detectors, Cameras, and Systems; (1995) https://doi.org/10.1117/12.218643
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The interaction process of a high-power laser and a PIN-junction optoelectronic diode has been studied theoretically and experimentally. It has been put forward that the thermal effect of laser beams and the eroding and washing effect while the laser plasmas expand out, results in the silicon photodiode to be damaged. The thermal distribution, the expression of the maximum temperature, have been obtained for the first time when a Q-switched Nd:YAG laser irradiated upon the PIN junction optoelectronic diode.

Citation Download Citation

Xiao-Wu Ni and Jian Lu "Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser", Proc. SPIE 2551, Photoelectronic Detectors, Cameras, and Systems, (8 September 1995); https://doi.org/10.1117/12.218643

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