Recent progress in the doping of MBE HgCdTe

Sivalingam Sivananthan; Priyalal S. Wijewarnasuriya; Jean-Pierre Faurie

doi:10.1117/12.218203

1 September 1995 Recent progress in the doping of MBE HgCdTe

Sivalingam Sivananthan, Priyalal S. Wijewarnasuriya, Jean-Pierre Faurie

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218203
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 10¹⁵ cm^-3. Electron mobilities in the range of (2 - 3) X 10⁵ cm²/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 10¹⁵ cm^-3 doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

Citation Download Citation

Sivalingam Sivananthan, Priyalal S. Wijewarnasuriya, and Jean-Pierre Faurie "Recent progress in the doping of MBE HgCdTe", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218203

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