Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films

Simon Y. M. Chooi; Fang Hong Gn; Lap Hung Chan

doi:10.1117/12.221141

15 September 1995 Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films

Simon Y. M. Chooi, Fang Hong Gn, Lap Hung Chan

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221141
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

As part of our continued studies into improving the performance of multilevel interconnect schemes, we have investigated the film properties and etchability of the AlSiCu/TiN and AlSiCu/TiW film stacks. In this study, two different types of TiN film were deposited by reactive sputtering: low-density (LD) TiN and high-density (HD) TiN. Low-density TiN film was found to have greater oxygen stuffing capability. Both the AlSiCu/TiN and AlSiCu/TiW film stacks can be easily etched anisotropically using high density plasma technology. Barrier integrity of these two film stacks was analyzed by high temperature furnace stress.

Citation Download Citation

Simon Y. M. Chooi, Fang Hong Gn, and Lap Hung Chan "Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221141

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