Modulation Characteristics Of Semiconductor Laser Devices

Etan Bourkoff

doi:10.1117/12.959948

29 July 1981 Modulation Characteristics Of Semiconductor Laser Devices

Etan Bourkoff

Proceedings Volume 0269, Integrated Optics I; (1981) https://doi.org/10.1117/12.959948
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Several aspects of the direct modulation characteristics of semiconductor lasers are discussed, including a brief review of some basic theory and a description of a computer-controlled measurement technique. Methods of extending the modulation bandwidth by changing external and internal parameters are also discussed. Proton-isolated tilted-facet and Zn-diffused window and continuous-stripe lasers are used as examples of devices which allow the modulation bandwidth to be controlled by varying parameters such as the photon lifetime, the spontaneous emission factor, and other aspects of the cavity Q. Measurements demonstrating modulation bandwidths of 6 - 7 GHz are also presented.

Citation Download Citation

Etan Bourkoff "Modulation Characteristics Of Semiconductor Laser Devices", Proc. SPIE 0269, Integrated Optics I, (29 July 1981); https://doi.org/10.1117/12.959948

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